Sol-gel derived ferroelectric PZT thin films on doped silicon substrates
Sol-gel derived ferroelectric PZT thin films on doped silicon substrates
复制标题
掺杂硅衬底上溶胶-凝胶衍生的铁电 PZT 薄膜
DOI：
10.1080/00150199008008236
复制
发表时间：
1990
期刊：
影响因子：
--
通讯作者：
J. Mackenzie
中科院分区：
文献类型：
--
作者：
Ching Jih Chen;E. Wu;Yuhuan Xu;K. C. Chen;J. Mackenzie
采用溶胶-凝胶法制备了Pb(ZrxTi1-x)O3薄膜。采用多次沉积工艺在掺杂硅衬底上镀制了厚度为0.5μm~2μm的薄膜。对采用金属-铁电-半导体结构的薄膜的铁电磁滞回线进行了研究，测得剩余极化为2.2×10-2C/m2，矫顽场为7.5kV/cm。与块体PZT相比，PZT薄膜具有较低的剩余极化和较高的矫顽场，这是因为PZT薄膜的颗粒较小。观察到了不对称的磁滞回线。产生这一现象的机理是空间电荷补偿了铁电-半导体界面的接触电势差。
Thin Pb(ZrxTi1-x)O3 films were fabricated by the sol-gel method. Films with thickness of 0.5 μm to 2 μm were coated on doped silicon substrates, using a multiple deposition process. The study on the ferroelectric hysteresis loop of the films using metal-ferroelectric-semiconductor configuration yielded remanent polarization of 2.2 × 10-2 C/m2 and coercive field of 7.5 kV/cm. The low remanent polarization and high coercive field of the PZT film compared to the bulk PZT is due to the small grain size. Asymmetric hysteresis loops were observed. The mechanism associated with the phenomenon is attributed to the space charge compensating the contact potential difference at the interface of ferroelectric-semiconductor.