Magnetic-field and temperature dependence of anomalous Hall effect in Pt/Cr2O3/Pt trilayer
Magnetic-field and temperature dependence of anomalous Hall effect in Pt/Cr2O3/Pt trilayer
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DOI：
10.1063/9.0000253
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发表时间：
2022-03
期刊：
影响因子：
1.6
通讯作者：
Xinrui Wang;K. Toyoki;R. Nakatani;Y. Shiratsuchi
中科院分区：
文献类型：
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作者：
Xinrui Wang;K. Toyoki;R. Nakatani;Y. Shiratsuchi
Pt/Cr_2O_3界面呈现出多种自旋相关的现象。在这项研究中，我们研究了异常霍尔效应（AHE）的Pt/40 nm厚的Cr2 O3/Pt三层生长在Al 2 O3（0001），其中Cr2 O3是一个反铁磁（AFM）绝缘体。所有的层外延生长在衬底上，X射线反射率测量表明，在每个界面处的界面粗糙度约为0.2 nm。AHE电阻在300 K时表现出非线性的磁场依赖性。在250 K以下，观察到一个明显的滞后与矫顽力。在150 K以上的温度下，其电导率约为7 T，在100 K以下的温度下，其电导率约为6 T。在285 K以下，电阻AHE呈现出一个有限值.温度依赖性形成一个宽峰，在约200 K处具有最大值，并随着温度的降低而逐渐减小。这种温度依赖性类似于Cr2 O3（0001）上的界面磁矩。基于这些结果，在导电层上生长的40 nm厚的Cr2 O3层中成功地检测到与AFM序参量或Néel矢量耦合的反射AHE。
The Pt/Cr2O3 interface exhibits a variety of spin-related phenomena. In this study, we investigated the anomalous Hall effect (AHE) of a Pt/40-nm-thick Cr2O3/Pt trilayer grown on Al2O3(0001), where Cr2O3 is an antiferromagnetic (AFM) insulator. All layers were grown epitaxially on the substrate, and X-ray reflectivity measurement showed an interfacial roughness of approximately 0.2 nm at each interface. The AHE resistance showed a nonlinear magnetic-field dependence at 300 K. Below 250 K, a clear hysteresis with coercivity was observed. The coercivity was approximately 7 T above 150 K and approximately 6 T below 100 K. The remanent AHE resistance shows a finite value below 285 K. The temperature dependence forms a broad peak with a maximum at approximately 200 K and gradually decreases with decreasing temperature. This temperature dependence is similar to that reported for the interfacial magnetic moment on Cr2O3(0001). Based on these results, the remanent AHE coupled with the AFM order parameter or the Néel vector was successfully detected in the 40-nm-thick Cr2O3 layer grown on the conductive layer.