State-preserving vs. non-state-preserving leakage control in caches

State-preserving vs. non-state-preserving leakage control in caches
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缓存中的状态保留与非状态保留泄漏控制

DOI:
10.1109/date.2004.1268822
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发表时间:
2004
期刊:
Proceedings Design, Automation and Test in Europe Conference and Exhibition
影响因子:
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通讯作者:
K. Skadron
K. Skadron
中科院分区:
--
文献类型:
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作者:
Yingmin Li;Dharmesh Parikh;Yan Zhang;K. Sankaranarayanan;Mircea R. Stan;K. Skadron

文献摘要

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本文通过比较使用70 nm工艺参数的数据缓存的休眠缓存和门控V/sub ss/,比较了状态保持和非状态保持技术用于缓存中泄漏控制的有效性。为了进行比较,我们引入了“HotLeakage”,这是一种用于亚阈值和栅极泄漏的新架构模型,它明确地模拟了温度,电压和参数变化的影响,并且能够在运行时由于操作条件,DVS技术,通过比较在不同L2延迟和不同栅极氧化物厚度值下的休眠高速缓存和门控-V/sub ss/,我们能够识别门控-V/sub ss/比休眠高速缓存更节能的操作参数范围,即使门控-V/sub_ss/不保留已被去激活的高速缓存行中的数据。我们也能够显示潜在的进一步的好处,门控V/子SS/,如果一个有效的动态自适应technique can be found. These结果揭穿了一个相当普遍的信念,即状态保持技术本质上是上级非状态保持技术。
This paper compares the effectiveness of state-preserving and non-state-preserving techniques for leakage control in caches by comparing drowsy cache and gated-V/sub ss/ for data caches using 70nm technology parameters. To perform the comparison, we introduce "HotLeakage", a new architectural model for subthreshold and gate leakage that explicitly models the effects of temperature, voltage, and parameter variations, and has the ability to recalculate leakage currents dynamically as temperature and voltage change at runtime due to operating conditions, DVS techniques, etc. By comparing drowsy-cache and gated-V/sub ss/ at different L2 latencies and different gate oxide thickness values, we are able to identify a range of operating parameters at which gated-V/sub ss/ is more energy efficient than drowsy-cache, even though gated-V/sub ss/ does not preserve data in cache lines that have been deactivated. We are also able to show potential further benefits of gated-V/sub ss/ if an effective dynamic adaptation technique can be found. These results debunk a fairly widespread belief that state-preserving techniques are inherently superior to non-state-preserving techniques.