Global investigation of III-V semiconductor phase diagram by nonempirical method
Global investigation of III-V semiconductor phase diagram by nonempirical method
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非经验方法对 III-V 族半导体相图的整体研究
DOI：
10.1063/1.349588
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发表时间：
1991
影响因子：
3.2
通讯作者：
T. Ito
中科院分区：
文献类型：
--
作者：
T. Mohri;K. Nakamura;T. Ito
将电子理论与统计力学中的集团变分方法相结合，计算了5种类型的III-III-V和7种类型的III-V-V赝二元相图。所有的相图都显示出相分离，并揭示了相分离是由弹性能贡献驱动的。相界的不对称性可以用二元有序化合物的晶格常数来系统地解释。
By combining electronic theory with the cluster variation method of statistical mechanics, five types of III⋅III‐V and seven types of III‐V⋅V pseudobinary phase diagrams are calculated. All the phase diagrams demonstrate phase separation and it is revealed that the phase separation is driven by elastic energy contribution. The asymmetry of the phase boundary can be systematically explained in terms of lattice constants of the constituent binary ordered compounds.