Low-Temperature Processing of Ferroelectric Pb(Zr0.53Ti0.47)O3 Thin Film from Molecular-Designed Alkoxide Precursor Solution
Low-Temperature Processing of Ferroelectric Pb(Zr0.53Ti0.47)O3 Thin Film from Molecular-Designed Alkoxide Precursor Solution
复制标题
利用分子设计的醇盐前驱体溶液低温加工铁电 Pb(Zr0.53Ti0.47)O3 薄膜
DOI：
10.1143/jjap.35.4896
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发表时间：
1996
影响因子：
1.5
通讯作者：
S. Hayashi
中科院分区：
文献类型：
--
作者：
Hisao Suzuki;M. B. Othman;K. Murakami;S. Hayashi
采用溶胶-凝胶法制备了Pb（Zr0.53Ti0.47）O3（PZT）薄膜。该方法涉及插入钙钛矿钛酸铅（PT）的原位结晶层间膜作为晶种层，其提供降低结晶活化能的成核位点。在镀铂硅片上，甚至在石英玻璃衬底上，成功地获得了具有钙钛矿结构的高度结晶的PZT薄膜。PZT薄膜中钙钛矿单相的形成温度在空气中有效地降低到500° C，在水蒸气和氧气的混合物中有效地降低到450° C。在500° C以下退火的所得膜的相对介电常数ε r随着膜厚度的增加而增加，并在约1.5 μ m厚度处趋于平稳。ε r在1 kHz时饱和在500左右。这种行为进行了比较，在相对较高的温度下通过其他方法制备的薄膜。得出的结论是，醇盐前体溶液的分子设计和使用的原位结晶PT种子层是必不可少的降低结晶温度，以及为获得良好的电性能的所得PZT薄膜。
A novel method is developed for the sol-gel preparation of Pb(Zr0.53Ti0.47)O3 (PZT) thin films. This method involves the insertion of an in situ crystallizing interlayer film of perovskite lead titanate (PT) as a seeding layer that offers nucleation sites which lower the activation energy for crystallization. Highly crystallized PZT films with the perovskite structure were successfully obtained on Pt-coated silicon wafers and even on silica-glass substrate. The formation temperature of a perovskite single phase in the PZT thin film was effectively lowered to 500° C in air and 450° C in a mixture of water vapor and oxygen. Relative permittivity, ε r, of the resultant films annealed below 500° C increased with increasing film thickness and leveled off at around 1.5 µ m thickness. ε r saturated at around 500 at 1 kHz. This behavior was compared with those of films prepared by other methods at relatively high temperatures. It was concluded that the molecular design of the alkoxide precursor solution and the use of an in situ crystallizing PT seeding layer were essential for lowering the crystallization temperature as well as for obtaining good electrical properties of the resultant PZT thin films.