STM study of the Ge growth mode on Si(001) substrates
STM study of the Ge growth mode on Si(001) substrates
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Si(001)衬底上Ge生长模式的STM研究
DOI：
10.1016/0169-4332(94)90362-x
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发表时间：
1994
影响因子：
6.7
通讯作者：
O. Nishikawa
中科院分区：
文献类型：
--
作者：
M. Tomitori;Kenji Watanabe;M. Kobayashi;O. Nishikawa
用扫描隧道显微镜(STM)在原子尺度上研究了Ge在Si(001)衬底上的生长模式。在Si衬底上沉积的Ge薄膜表现出STranski-Krastanov生长模式，沉积的薄膜逐层生长到几个ML，然后是几种类型的具有明显小面的三维岛屿。在300、400和500°C的生长温度下，绘制了从小于1ML到8ML的Ge覆盖层的Ge生长相图，检查了STM图像。此外，还研究了Ge覆盖层的退火效应，以阐明岛的稳定性。
The Ge growth mode on a Si(001) substrate was examined by scanning tunneling microscopy (STM) on the atomic scale. Germanium overlayers on Si substrates exhibited the Stranski-Krastanov growth mode, where the deposited films grew layer-by-layer up to a few ML, followed by the several types of the three-dimensional islands with distinctive facets. The phase diagram of the Ge growth was constructed for the Ge coverages from less than 1 ML up to 8 ML at the growth temperatures of 300, 400 and 500°C, examining the STM images. Furthermore, annealing effects for the Ge overlayer were also studied to clarify the stability of the islands.