Coherent optical phonon generation by the electric current in quantum wells
Coherent optical phonon generation by the electric current in quantum wells
复制标题
量子阱中电流产生相干光学声子
DOI：
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发表时间：
2000
期刊：
影响因子：
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通讯作者：
M. Stroscio
中科院分区：
文献类型：
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作者：
S. Komirenko;K. W. Kim;V. Kochelap;I. Fedorov;M. Stroscio
本文讨论了量子阱中漂移电子产生受限LO声子的影响。我们已经推导出声子增量作为声子波矢量、电子漂移速度和结构参数的函数的一般公式。声子增量和声子寿命的数值估计表明，AlAs/GaAs/AlAs和GaSb/InSb/GaSb量子阱结构可以证明电流对相干LO声子产生的影响。
This letter addresses the effect of generation of confined LO phonons by drifting electrons in quantum wells. We have derived a general formula for the phonon increment as a function of phonon wave vector, electron drift velocity, and structure parameters. Numerical estimates of the phonon increment and the phonon lifetimes have shown that AlAs/GaAs/AlAs and GaSb/InSb/GaSb quantum well structures can demonstrate the effect of coherent LO phonon generation by the electric current.