Effects of layout methods of RFCMOS on noise performance
Effects of layout methods of RFCMOS on noise performance
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DOI：
10.1109/ted.2005.859694
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发表时间：
2005-12
影响因子：
3.1
通讯作者：
Wen Wu;S. Lam;Mansun Chan
中科院分区：
文献类型：
--
作者：
Wen Wu;S. Lam;Mansun Chan
本文研究了不同布局方法对射频CMOS晶体管噪声性能的影响。研究了采用多指形布局和采用Manhattan-oriented多晶硅栅的更紧凑的华夫形布局对射频特性的优化。通过仿真和实验数据证明了华夫布局具有更大的设计窗口。在相同偏置条件下，最大振荡频率f/sub max/和截止频率f/sub T/的提高导致华夫格MOSFET的RF噪声性能的改善。SpectreRF仿真结果表明，与多指器件相比，在CMOS低噪声放大器中使用华夫MOSFET时，噪声系数降低了10%。
This paper presents a study on the effects of different layout methods on the noise performance of RF CMOS transistors. The optimization of RF characteristics using multifinger layout and a more compact waffle layout with Manhattan-oriented polysilicon gate are studied. The waffle layout is demonstrated to have a larger design window through the simulation as well as the experimental data. The improvement of both the maximum oscillation frequency f/sub max/ and the cutoff frequency f/sub T/ at the same biasing condition leads to the improvement on RF noise performance for the waffle MOSFETs. Compared with the multifinger devices, the SpectreRF simulation reveals that 10% reduction in noise figure is achieved when the waffle MOSFETs are used in CMOS low-noise amplifiers.