Effects of excess tellurium and growth parameters on the band gap defect levels in CdxZn1−xTe
Effects of excess tellurium and growth parameters on the band gap defect levels in CdxZn1−xTe
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DOI：
10.1063/1.4757595
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发表时间：
2012-10
影响因子：
3.2
通讯作者：
R. Soundararajan;K. Lynn
中科院分区：
文献类型：
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作者：
R. Soundararajan;K. Lynn
本研究总结了一种有效的方法来理解补偿使用的CdZnTe作为环境温度辐射探测器。铟掺杂的CdZnTe钝化带隙中的某些有害的本征缺陷和缺陷复合物。这是通过使用起始材料中过量碲（0%至7.5%重量）和生长期间的工艺变量（包括施加的温度梯度、生长速率和冷却工艺）的组合来实现的。这些研究表明，轻微过量的碲以及冷却方案的组合可以通过引起有利的载流子补偿来控制CdZnTe带隙中的某些本征缺陷能级和缺陷能级复合物。在宏观层面上，这些操作有助于最大限度地减少生长过程中的热不稳定性，并确定最终的晶粒结构，完整性和铸锭的产量。此外，这些操作有助于控制某些本征缺陷能级和缺陷能级复合物的形成在带G…
This research summarizes an effective way to understand compensation for use of CdZnTe as ambient temperature radiation detector. The indium doped CdZnTe passivates certain detrimental intrinsic defects and defect complexes in the band gap. This was achieved by using a combination of excess tellurium in the starting material (0% to 7.5% by weight) and the process variables during growth, including the imposed temperature gradient, growth rate, and cool-down process. These studies have shown that a combination of slight excess tellurium as well as the cool-down scheme could control certain intrinsic defect levels and defect level complexes in the band gap of CdZnTe by causing favorable carrier compensation. At a macroscopic level, these manipulations help to minimize thermal instabilities during growth and determine the final grain structure, integrity, and yield of the ingot. Also, these manipulations help to control the formation of certain intrinsic defect levels and defect level complexes in the band g...