Influence of frequency and DC bias on magneto-impedance behaviors in double-MgO magnetic tunnel junctions
Influence of frequency and DC bias on magneto-impedance behaviors in double-MgO magnetic tunnel junctions
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DOI：
10.1016/j.ssc.2010.06.008
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发表时间：
2010-10-01
影响因子：
2.1
通讯作者：
Takahashi, M.
中科院分区：
文献类型：
--
作者：
Kuo, K. M.;Lin, C. Y.;Takahashi, M.
在磁并联和反并联状态下，测量了双势垒MgO磁隧道结（DMTJ）的磁阻抗（MI）与频率（20 Hz-3 MHz）和直流偏置（-1至IV）的函数关系。在所有频率下都观察到强烈的非线性效应，并且在类似于1/RC的松弛频率下，MI由正变为负。绘制了频率-直流偏置（f-V）“相位图”来描述磁阻抗响应的组合效应。双氧化镁势垒可以有效地降低隧道磁电阻和隧道磁电容在高压下的衰减。TMC的V-1/2（磁响应降至最大值1/2的电压）达到了约1.35 V的平均值，大于TMR的V-1/2（约0.95 V），说明在高频应用中，TMC的响应比TMR更稳定。(C) 2010年Elsevier Ltd .出版
Magneto-impedance (MI) of a double-barrier MgO magnetic tunnel junction (DMTJ) is measured as a function of frequency (20 Hz-3 MHz) and DC bias (-1 to IV) under magnetic parallel and antiparallel states. A strong nonlinear effect is observed at all frequencies and the MI changes from positive to negative at the relaxation frequency similar to 1/RC. A frequency-dc bias (f-V) "phase diagram" is mapped out to describe the combination effects of the magneto-impedance response. The decay of the tunnel magneto-resistance (TMR) and tunnel magneto-capacitance (TMC) at high voltage is sufficiently reduced by the double-MgO barrier. The V-1/2 (the voltage that magnetic response drops to 1/2 of its maximum) of TMC reaches an average value of similar to 1.35 V. which is larger than the V-1/2 of TMR similar to 0.95 V, suggesting that the response of TMC is more stable than TMR for high frequency application. (C) 2010 Published by Elsevier Ltd