Electron beam lithography - Resolution limits
Electron beam lithography - Resolution limits
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DOI：
10.1016/0167-9317(95)00368-1
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发表时间：
1996-09-01
影响因子：
2.3
通讯作者：
Ryan, JM
中科院分区：
文献类型：
--
作者：
Broers, AN;Hoole, ACF;Ryan, JM
电子束光刻通常被认为具有最高的实际分辨率能力。在本文中，在决议方面的最新技术进行了审查。这涵盖了传统的抗蚀剂，如PMMA，抗污染，无机抗蚀剂和损坏过程。虽然精确的限制仍然不清楚，一些见解的分辨率限制因素。也考虑到分辨率的最佳措施，它建议，最小线间距是一个更适当的和主观的措施比最小可实现的功能大小。
Electron beam lithography is generally accepted to have the highest practical resolution capability. In this paper the state of the art in terms of resolution is reviewed. This covers conventional resists such as PMMA, contamination resist, inorganic resists and damage processes. Some insights into the resolution limiting factors are given although the precise limitations still remain unclear. Consideration is also given as to the best measure of resolution and it is suggested that the minimum line spacing is a more appropriate and less subjective measure than minimum achievable feature size.