Epitaxial growth of metastable Ba2RuO4 films with the K2NiF4 structure
Epitaxial growth of metastable Ba2RuO4 films with the K2NiF4 structure
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K2NiF4 结构亚稳态 Ba2RuO4 薄膜的外延生长
DOI：
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发表时间：
1999
期刊：
影响因子：
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通讯作者：
Yang Liu
中科院分区：
文献类型：
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作者：
Y. Jia;M. Zurbuchen;S. Wozniak;A. Carim;D. Schlom;Ling;S. Briczinski;Yang Liu
采用脉冲激光沉积法在（100）SrTiO 3衬底上生长了具有K2NiF4结构的Ba2RuO4外延薄膜。X射线衍射和横截面透射电子显微镜的结果表明，薄膜是c轴取向，单畴，并含有相对较少的堆垛层错和共生。电测量表明金属在低温下具有导电性，但没有超导性的证据。
Epitaxial Ba2RuO4 films with the K2NiF4 structure have been grown by pulsed laser deposition on (100) SrTiO3 substrates. X-ray diffraction and cross-sectional transmission electron microscopy results indicate that the films are c-axis oriented, single-domain, and contain relatively few stacking faults and intergrowths. Electrical measurements indicate metallic conductivity to low temperatures, but no evidence of superconductivity.