Statistical Electrothermal Simulation for Lifetime Prediction of Parallel SiC MOSFETs and Modules
Statistical Electrothermal Simulation for Lifetime Prediction of Parallel SiC MOSFETs and Modules
复制标题
用于预测并联 SiC MOSFET 和模块寿命的统计电热仿真
DOI：
10.1109/ieses45645.2020.9210690
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
A. Irace
中科院分区：
文献类型：
--
作者：
A. Borghese;M. Riccio;A. Castellazzi;L. Maresca;G. Breglio;A. Irace
在本文中，SiC功率MOSFET的温度依赖的SPICE模型被用于多芯片功率模块应用的并行器件的统计模拟（ET）。所提出的方法被应用到功率模块中的半桥配置，其中并联MOSFET受到不匹配的参数。阈值电压和电流因子的统计波动的影响，在硬开关条件下的能量耗散的Monte Carlo ET模拟进行评估。此后，平均失效时间（MTTF）已估计使用寿命模型从文献中的SiC芯片。最后，分析和讨论了电流不平衡对器件自热变化引起的加速因子的影响。
In this paper, a temperature-dependent SPICE model of SiC power MOSFET is used for statistical electrothermal (ET) simulations of parallel devices for multichip power module applications. The proposed approach is applied to a power module in a half-bridge configuration, where parallel MOSFETs are subject to mismatched parameters. The impact of threshold voltage and current factor statistical fluctuations on energy dissipation during hard switching conditions is evaluated by means of Monte Carlo ET simulations. Thereafter, the mean time-to-failure (MTTF) has been estimated by using the lifetime models from literature for SiC chip. Finally, the effect of current imbalance on the acceleration factor due to changes in devices self-heating is analyzed and discussed.