Ceramic layer epitaxy by pulsed laser deposition in an ultrahigh vacuum system
Ceramic layer epitaxy by pulsed laser deposition in an ultrahigh vacuum system
复制标题
在超高真空系统中通过脉冲激光沉积进行陶瓷层外延
DOI：
10.1063/1.105002
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发表时间：
1991
影响因子：
4
通讯作者：
M. Yoshimoto
中科院分区：
文献类型：
--
作者：
H. Koinuma;H. Nagata;Tadashi Tsukahara;S. Gonda;M. Yoshimoto
陶瓷层外延是指在原子尺度上外延生长厚度可调的陶瓷薄膜。利用ArF准分子激光器在Si（111）和SrTiO 3（001）衬底上分别沉积CeO 2和SrTiO 3薄膜，在650-750 °C和5×10−7 Pa下观察到反射高能电子衍射（RHEED）强度振荡现象。振荡周期与CeO 2（111）和SrTiO 3（001）晶面间距有很好的对应关系。这第一次观察RHEED振荡激光沉积陶瓷薄膜表明，超高真空激光沉积是一种很有前途的方法，用于生产原子调节陶瓷层，包括可能的新的高Tc超导体。
Ceramic layer epitaxy, defined as the epitaxial growth of ceramic thin films with thicknesses regulated on an atomic scale, was verified by a new method using pulsed laser deposition in ultrahigh vacuum (UHV). The intensity oscillation of reflection high‐energy electron diffraction (RHEED) was observed in an ArF excimer laser deposition of CeO2 and SrTiO3 films on Si(111) and SrTiO3(001) substrates, respectively, at 650–750 °C under 5×10−7 Pa. The oscillation periodicities corresponded well to interplane distances of CeO2(111) and SrTiO3(001). This first observation of RHEED oscillation in laser deposition of ceramic films suggests that UHV laser deposition is a promising method for producing atomically regulated ceramic layers inclusive of possible new high Tc superconductors.