Electrical properties and interfacial issues of high-k/Si MIS capacitors characterized by the thickness of Al2O3 interlayer
Electrical properties and interfacial issues of high-k/Si MIS capacitors characterized by the thickness of Al2O3 interlayer
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以 Al2O3 中间层厚度为特征的高 k/Si MIS 电容器的电性能和界面问题
DOI：
10.1063/1.4955001
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发表时间：
2016
期刊：
影响因子：
1.6
通讯作者：
Wang Shulong
中科院分区：
文献类型：
--
作者：
Wang Xing;Liu Hongxia;Fei Chenxi;Zhao Lu;Chen Shupeng;Wang Shulong
在 La2O3 层和 Si 衬底之间沉积薄的 Al2O3 中间层，通过阻止衬底 Si 的外扩散来清除界面层 (IL)。详细讨论了该方法的一些优点和缺点。透射电子显微镜结果证实了明显的 IL 减少，表明该方法在 IL 清除中的可行性。随着Al2O3中间层厚度的增加，氧空位和漏电流特性得到显着改善。同时，还观察到一些缺点，例如界面陷阱和氧化物捕获电荷特性的退化。
A thin Al2O3 interlayer deposited between La2O3 layer and Si substrate was used to scavenge the interfacial layer (IL) by blocking the out-diffusion of substrate Si. Some advantages and disadvantages of this method were discussed in detail. Evident IL reduction corroborated by the transmission electron microscopy results suggested the feasibility of this method in IL scavenging. Significant improvements in oxygen vacancy and leakage current characteristics were achieved as the thickness of Al2O3 interlayer increase. Meanwhile, some disadvantages such as the degradations in interface trap and oxide trapped charge characteristics were also observed.