Very Low-Voltage Operation of Ionic Liquid-Gated n-Type Organic Field-Effect Transistors
Very Low-Voltage Operation of Ionic Liquid-Gated n-Type Organic Field-Effect Transistors
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DOI：
10.1143/jjap.49.01ab13
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发表时间：
2010-01
影响因子：
1.5
通讯作者：
T. Uemura;M. Yamagishi;S. Ono;J. Takeya
中科院分区：
文献类型：
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作者：
T. Uemura;M. Yamagishi;S. Ono;J. Takeya
采用离子液体电解液作为栅极层，在极低的栅极电压下以高跨导的方式工作N型有机场效应晶体管。四氰基喹甲烷单晶和C60薄膜分别与低粘度和高离子导电性的1-乙基-3-甲基咪唑双(三氟甲磺酰基)亚胺离子液体界面，使高密度电子在半导体表面迅速积累。晶体管在施加最小栅极电压的情况下，由限制在分子尺度亥姆霍兹层内的高电场选通。高跨导单晶器件表现出良好的空气稳定性，C60薄膜晶体管在已报道的n型有机晶体管中实现了最高的归一化跨导，与传统的SiO_2器件相比，阈值电压有了显著的提高。
n-Type organic field-effect transistors are operated with high transconductance at very low gate voltage using ionic-liquid electrolyte for the gating layers. Tetracyanoquinodimethane single crystals and C60 thin films are respectively interfaced with ionic liquid of 1-ethyl-3-methyl-imidazolium bis(trifluoromethanesulfonyl)imide known for its low viscosity and high ionic conductivity, so that high-density electrons are rapidly accumulated in the semiconductor surfaces. The transistors are gated by high electric field confined to a molecular scale Helmholtz layer with the application of minimum gate voltages. The high-transconductance single-crystal device exhibits excellent air stability and the C60 thin-film transistor has realized the highest normalized transconductance among reported n-type organic transistors, together with remarkable improvement in threshold voltage as compared with that in conventional SiO2 devices.