High T0 (140 K) and low-threshold long-wavelength strained quantum well lasers on InGaAs ternary substrates
High T0 (140 K) and low-threshold long-wavelength strained quantum well lasers on InGaAs ternary substrates
复制标题
InGaAs 三元衬底上的高 T0 (140 K) 和低阈值长波长应变量子阱激光器
DOI：
10.1049/el:19971238
复制
发表时间：
1997
影响因子：
1.1
通讯作者：
H. Ishikawa
中科院分区：
文献类型：
--
作者：
K. Otsubo;H. Shoji;T. Kusunoki;Takashi Suzuki;T. Uchida;Nishijima Yoshito;K. Nakajima;H. Ishikawa
在In/sub 0.22/Ga/sub 0.78/As三元衬底上制备了1.2 μ m/s/s μ m的InGaAs-InAlGaAs应变量子阱激光器。具有高反射面的激光器的阈值电流密度在20/spl deg/C时为176 A/cm/sup 2/。器件的特征温度（T/sub 0/）达到了140 K，这是迄今为止报道的长波长半导体激光器的最高值。
InGaAs-InAlGaAs strained quantum well lasers emitting in the 1.2 /spl mu/m region have been fabricated on In/sub 0.22/Ga/sub 0.78/As ternary substrates. The threshold current density of the laser with highly reflective facets is 176 A/cm/sup 2/ at 20/spl deg/C. The characteristic temperature (T/sub 0/) of the device has reached 140 K, which is the highest value ever reported for long-wavelength semiconductor lasers.
DOI：
10.1143/jjap.35.1273
发表时间：
1996-02-01
期刊：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
影响因子：
--
作者：
Kondow, M;Uomi, K;Yazawa, Y
通讯作者：
Yazawa, Y