Fracture Toughness Evaluated by Indentation Methods and Its Relation to Surface Energy in Silicon Single Crystals
Fracture Toughness Evaluated by Indentation Methods and Its Relation to Surface Energy in Silicon Single Crystals
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DOI：
10.2320/matertrans.44.681
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发表时间：
2003-04
影响因子：
1.2
通讯作者：
Masaki Tanaka;K. Higashida;H. Nakashima;H. Takagi;M. Fujiwara
中科院分区：
文献类型：
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作者：
Masaki Tanaka;K. Higashida;H. Nakashima;H. Takagi;M. Fujiwara
用压痕法研究了硅单晶的断裂韧性，用分子动力学方法计算了硅单晶的表面能。在室温下用锥形压头压入（001）硅晶片时，{110}裂纹主要从晶面引入，表明在h 001 i区的晶面中，{110}面最容易沿着断裂。为了确认这种取向依赖性，使用分子动力学计算这些平面的表面能。表面能
Fracture toughness of silicon crystals has been investigated by indentation methods, and their surface energy has been calculated using molecular dynamics (MD). When a conical indenter was forced into a (001) silicon wafer at room temperature, {110} cracks were mainly introduced from the indent, indicating that fracture occurs most easily along the {110} plane among the crystallographic planes of the h001i zone. To confirm this orientation dependence, surface energies for those planes were computed using molecular dynamics. The surface energy