Using single-electron box arrays for voltage sensing applications
Using single-electron box arrays for voltage sensing applications
复制标题
DOI：
10.1063/5.0005425
复制
发表时间：
2020-05-26
影响因子：
4
通讯作者：
Snider, Gregory L.
中科院分区：
文献类型：
--
作者：
Filmer, Matthew J.;Zirkle, Thomas A.;Snider, Gregory L.
单电子隧穿晶体管(SETS)和盒(SEB)属于基于库仑阻塞现象的电荷敏感电子器件家族。SEB是一个两端器件，由串联的“漏电”CJ和“非漏电”CG组成，纳米级电容器。在低温下，公共节点处的电荷被量子化，并且只能在能量布居简并点附近改变，导致SEB导纳作为施加到Cg的电压的函数而周期性地振荡。与SEB相比，SEB具有更高的工作温度，耐静电放电，并且占地面积小得多。为了监测SEB导纳，可以使用射频反射仪。为了提高信噪比，受SEB中导纳的微小变化的限制，共享相同源极和栅电极的多个器件被并联连接以形成SEB阵列。由于不可避免的随机偏置电荷，n个SEB阵列的信号升压预计与N相似。我们的实验证明，通过仔细选择工作点，对于较小的阵列规模，可以通过接近N的系数来增强对传感门上的电压的响应，从而提供了一种方法，通过该方法，这些器件可以用于实际的传感应用，例如扫描探头。
Single-electron tunneling transistors (SETs) and boxes (SEBs) belong to the family of charge-sensitive electronic devices based on the phenomenon of Coulomb blockade. An SEB is a two-terminal device composed of "leaky,"Cj, and "non-leaky,"Cg, nanoscaled capacitors in series. At low temperatures, the charge at the common node is quantized and can only be changed near energy-population degeneracy points, resulting in periodic oscillations of the SEB admittance as a function of voltage applied toCg. In comparison to the SETs, SEBs have higher operating temperature, are electrostatic discharge tolerant, and have a much smaller footprint. To monitor the SEB admittance, Radio Frequency reflectometry can be used. To improve the signal-to-noise ratio, limited by the small change in admittance in an SEB, multiple devices sharing the same source and gate electrodes are connected in parallel to form arrays of SEBs. Due to unavoidable random offset charges, the signal boost for an array ofN SEBs is expected to be similar to N. We experimentally demonstrate that by carefully choosing the operating point, the response to the voltage on the sensing gate can be enhanced, for small arrays scales, by a factor approachingN and, thus, provides a method by which these devices can be used in practical sensing applications, such as a scanning probe.