Blue luminescence from Si+‐implanted SiO2 films thermally grown on crystalline silicon
Blue luminescence from Si+‐implanted SiO2 films thermally grown on crystalline silicon
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DOI：
10.1063/1.116554
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发表时间：
1996-02
影响因子：
4
通讯作者：
L. Liao;X. Bao;Xiang-Qin Zheng;Ning-Sheng Li;Naiben Min
中科院分区：
文献类型：
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作者：
L. Liao;X. Bao;Xiang-Qin Zheng;Ning-Sheng Li;Naiben Min
将能量为120kev、剂量为1016 cm−2的硅离子注入到晶体硅上热生长的SiO2薄膜中。在~ 5.0 eV的紫外激发下，植入膜在室温下表现出蓝色发光，峰值为~ 2.7 eV。蓝色辐射是由薄膜中的氧空位引起的。
Si ions were implanted into thermally grown SiO2 films on crystalline Si at an energy of 120 keV and with a dose of 1016 cm−2. Under an ultraviolet excitation of ∼5.0 eV, the implanted films exhibit blue luminescence with a peak of ∼2.7 eV at room temperature. The blue emission is caused by oxygen vacancies in the films.