Realization of Room-Temperature Phonon-Limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening
Realization of Room-Temperature Phonon-Limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening
复制标题
通过介质和载流子屏蔽实现单层MoS2中室温声子限制载流子输运
DOI：
10.1002/adma.201503033
复制
发表时间：
2016-01-20
影响因子：
29.4
通讯作者：
Wang, Xinran
中科院分区：
文献类型：
--
作者：
Yu, Zhihao;Ong, Zhun-Yong;Wang, Xinran
通过将高卡伯介电基板和高密度载流子相结合，可以有效地筛选MoS2中的库仑杂质，从而首次在单层MoS2晶体管中实现前所未有的约150 cm(2) V-1 s(-1)的室温迁移率和室温声子限制传输。
By combining a high-kappa dielectric substrate and a high density of charge carriers, Coulomb impurities in MoS2 can be effectively screened, leading to an unprecedented room- temperature mobility of approximate to 150 cm(2) V-1 s(-1) and room-temperature phonon-limited transport in a mono layer MoS2 transistor for the first time.