Influence of local curvature on sputtering
Influence of local curvature on sputtering
复制标题
局部曲率对溅射的影响
DOI：
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
H. Urbassek
中科院分区：
文献类型：
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作者：
Maureen L. Nietiadi;H. Urbassek
溅射取决于局部表面曲率；与平面参考目标相比，凸面比凹面高，凹面比凹面低。我们从理论上分析了这种依赖关系，并表明溅射良率主要取决于无维曲率参数，其次取决于沿离子束方向沉积能量分布的相对方差。利用分子动力学方法，我们研究了500 eV Ar对a-Si靶的影响；在这里，我们比较了一个线和一个谷结构（曲率半径2.5 nm）与一个平面目标。我们的研究结果表明，溅射产量、陨石坑函数和溅射粒子的角分布强烈依赖于曲率。
Sputtering depends on the local surface curvature; it is higher for convex and lower for concave surfaces than for a flat reference target. We analyze this dependence theoretically and show that the sputter yield primarily depends on a dimension-free curvature parameter, and second on the relative variance of the deposited-energy distribution in the direction along the ion beam. Using molecular dynamics, we study the effects in an exemplary way for 500 eV Ar impact on an a-Si target; here, we compare a wire and a valley structure (radii of curvature 2.5 nm) with a planar target. Our findings demonstrate that the sputter yield, the crater function, and the angular distribution of sputtered particles strongly depend on the curvature.