SILICON DIVACANCY AND ITS DIRECT PRODUCTION BY ELECTRON IRRADIATION
SILICON DIVACANCY AND ITS DIRECT PRODUCTION BY ELECTRON IRRADIATION
复制标题
硅二空位及其电子辐照直接生产
DOI：
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发表时间：
1961
期刊：
影响因子：
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通讯作者：
G. D. Watkins
中科院分区：
文献类型：
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作者：
J. Corbett;G. D. Watkins
在硅中发现了一种内在缺陷二价，并发现其在室温下是稳定的。结果表明，这种缺陷可以在高能电子照射下直接产生（即，其形成不需要空位的迁移和聚集）。在电子束方向的生产速率中观察到明显的各向异性，从而深入了解详细的生产过程。(L.N.N.)
An intrinsic defect divalency, produced in silicon, was identified and found to be stable at room temperature. It is demonstrated that this defect can be produced directly in a high-energy electron irradiation (that is, the migration and agglomeration of vacancies is not required for its formation). A marked anisotropy is observed in the production rate with respect to the electron beam direction, giving insight into the detailed production process. (L.N.N.)