Influence of zone purification process on TlBr crystals for radiation detector fabrication
Influence of zone purification process on TlBr crystals for radiation detector fabrication
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DOI：
10.1016/j.nima.2007.04.028
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发表时间：
2007-08
影响因子：
1.4
通讯作者：
K. Hitomi;T. Onodera;T. Shoji
中科院分区：
文献类型：
--
作者：
K. Hitomi;T. Onodera;T. Shoji
溴化铊（TlBr）是一种宽禁带化合物半导体，是一种很有前途的核辐射探测器材料。在这项研究中，传统的区域精炼方法，以降低TlBr晶体中的杂质浓度。为了评价区带纯化的效率，将区带纯化过程重复多达300次。比较了经1次、100次和300次区带提纯的TlBr晶体的电阻率、电荷输运特性和光谱性能，以验证区带提纯工艺的有效性。
Thallium bromide (TlBr) is a wide gap compound semiconductor and is a promising material for fabrication of nuclear radiation detectors. In this study, the conventional zone refining method was employed to reduce the concentration of impurities in the TlBr crystals. In order to evaluate the efficiency of the zone purification, the zone purification process was repeated up to 300 times. The resistivity, the charge transport properties, and the spectroscopic performance of TlBr detectors fabricated from the crystals zone purified 1 time, 100 times, and 300 times were compared in this study in order to clarify the effectiveness of the zone purification process.