Observation of Static Domain Structures of Thin-Film Magnetoimpedance Elements With DC Bias Current
Observation of Static Domain Structures of Thin-Film Magnetoimpedance Elements With DC Bias Current
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DOI：
10.1109/tmag.2018.2860582
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发表时间：
2019-02-01
影响因子：
2.1
通讯作者：
Sumida, C.
中科院分区：
文献类型：
--
作者：
Kikuchi, H.;Sumida, C.
本文研究了在直流偏置电流和直流外磁场作用下，易磁化轴角在0度-30度范围内的薄膜磁阻抗元件磁畴结构的变化。当偏置电流为零时，所有元件180度域在零场。180度磁畴的角度取决于易磁化轴的方向。由于偏置直流电流的域配置的变化没有一个系统的行为，相反，观察到复杂的变化。然而，多畴结构出现的场范围往往随着绝对直流偏置电流值的增加而变窄。复杂的变化取决于基于所施加的直流外部场和由直流电流产生的偏置场的复杂场分布。阻抗不表现出显着的变化，在域配置发生变化的领域，这意味着磁化旋转是在高频下的阻抗变化的主导因素。
We investigate changes in domain structures of thin-film magnetoimpedance elements with the easy-axis angles in the range of 0 degrees-30 degrees upon the application of dc bias current directly to the elements as well as the dc external magnetic field. All of the elements 180 degrees domains at zero field when the bias current is zero. The angle of 180 degrees domains depends on the direction of the easy axis. The changes in a domain configuration due to the bias dc current do not have a systematic behavior; instead, complex variations are observed. However, the field range at which multi-domain structures appear tends to be narrower with the increase in the absolute dc bias current value. The complex changes depend on the complex field distribution based on the applied dc external field and bias field generated by the dc current. The impedance does not exhibit significant changes around fields where changes in domain configuration occur, which implies that the magnetization rotation is the dominant factor for the impedance changes at high frequencies.