Spectral tuning of plasmon-enhanced silicon quantum dot luminescence
Spectral tuning of plasmon-enhanced silicon quantum dot luminescence
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DOI：
10.1063/1.2191411
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发表时间：
2006-03-27
影响因子：
4
通讯作者：
Polman, A
中科院分区：
文献类型：
--
作者：
Biteen, JS;Lewis, NS;Polman, A
在纳米级银岛阵列的存在下，硅量子点在与银岛阵列的集体偶极等离子体共振频率相对应的发射频率上表现出高达7倍的发光增强。利用电子束光刻技术来改变间距和颗粒直径，这种波长选择性增强可以随着金属阵列共振波长从600 nm调谐到900 nm而变化。耦合后的发光强度增强归因于硅量子点辐射衰减率的增加。(c) 2006年美国物理研究所。
In the presence of nanoscale silver island arrays, silicon quantum dots exhibit up to sevenfold luminescence enhancements at emission frequencies that correspond to the collective dipole plasmon resonance frequency of the Ag island array. Using electron-beam lithography to alter the pitch and particle diameter, this wavelength-selective enhancement can be varied as the metal array resonance wavelength is tuned from 600 to 900 nm. The luminescence intensity enhancement upon coupling is attributed to an increase in the radiative decay rate of the silicon quantum dots. (c) 2006 American Institute of Physics.