Atomic-column resolution quantitative composition analysis of AlN interlayer in MOCVD-grown AlGaN/AlN/GaN heterostructure using HAADF-STEM

Atomic-column resolution quantitative composition analysis of AlN interlayer in MOCVD-grown AlGaN/AlN/GaN heterostructure using HAADF-STEM
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使用 HAADF-STEM 对 MOCVD 生长的 AlGaN/AlN/GaN 异质结构中的 AlN 中间层进行原子柱分辨率定量成分分析

DOI:
10.1063/5.0123768
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发表时间:
2023-01
期刊:
影响因子:
1.6
通讯作者:
Y. Zhang
Y. Zhang
中科院分区:
材料科学4区
文献类型:
--
作者:
Q. Li;Y. Zhang

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利用高角度环形暗场扫描电子显微镜对金属-有机化学气相沉积生长的AlGaN/AlN/GaN异质结进行了原子柱分辨的成分定量分析。此外,还研究了AlN中间层中不同浓度的Al对电子性质的影响。AlN中间层中Al的最大浓度为0.41,AlN上下界面的成分梯度导致界面不对称展宽。计算表明,随着AlN中间层中Al浓度的增加,二维电子气片密度近似线性增加。当Al浓度大于0.4时,合金散射也得到有效抑制。
Quantitative compositional analysis using high-angle annular dark-field scanning transmission electron microscopy was performed for a metal-organic chemical vapor deposition-grown AlGaN/AlN/GaN heterostructure at atomic-column resolution. In addition, the effects that different concentrations of Al in the AlN interlayer had on the electronic properties were evaluated. The maximum Al concentration in the AlN interlayer was 0.41, and the compositional grading at the upper and lower AlN interfaces resulted in an asymmetric broadening of the interface. Calculations show that increasing the Al concentration in the AlN interlayer leads to an approximately linear increase in the two-dimensional electron gas sheet density. The alloy scattering is also effectively suppressed when the Al concentration is greater than 0.4.
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