Large magnetoresistance tunnelling through a magnetically modulated nanostructure
Large magnetoresistance tunnelling through a magnetically modulated nanostructure
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DOI：
10.1088/0953-8984/15/8/311
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发表时间：
2003-03
期刊：
影响因子：
--
通讯作者：
Maowang Lu;Lide Zhang
中科院分区：
文献类型：
--
作者：
Maowang Lu;Lide Zhang
Based on a combination of an inhomogeneous magnetic field and a two-dimensional electron gas, we have constructed a giant magnetoresistance nanostructure, which can be realized experimentally by the deposition of two parallel ferromagnetic strips on top of a semiconductor heterostructure. We have theoretically studied the magnetoresistance for electrons tunnelling through this nanostructure. It is shown that there exists a significant transmission difference between the parallel and antiparallel magnetization configurations, which leads to a large magnetoresistance. It is also shown that the magnetoresistance ratio strongly depends not only on incident electronic energy but also on the ferromagnetic strips, and thus a much larger magnetoresistance ratio can be obtained by properly fabricating the ferromagnetic strips in the system.
