Molecular beam epitaxy of β-FeSi_2 films on Si (111) substrates and its influence on minority-carrier diffusion length of Si measured by EBIC
Molecular beam epitaxy of β-FeSi_2 films on Si (111) substrates and its influence on minority-carrier diffusion length of Si measured by EBIC
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Si(111)衬底上β-FeSi_2薄膜的分子束外延及其对Si少数载流子扩散长度的影响
DOI：
10.1016/j.phpro.2011.01.029
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
and T. Suemasu
中科院分区：
文献类型：
--
作者：
H. Kawakami;M. Suzuno;K. Akutsu;J. Chen;Y. Fuxing;T. Sekiguchi;and T. Suemasu
研究了分子束外延（MBE）β-FeSi_2薄膜对n型Si（111）衬底少子扩散长度的影响。电子束感生电流技术发现，在MBE生长前形成β-FeSi 2模板的样品中，扩散长度的影响小于未形成模板的样品。对电子背散射衍射法测量的β-FeSi 2晶粒尺寸进行了讨论。
We have studied the influence of molecular beam epitaxy (MBE) of β-FeSi2films on minority-carrier diffusion length of an n-type Si(111) substrate. It was found from electron beam induced current technique that the diffusion length was less influenced in sample formed with a β-FeSi2template prior to the MBE growth than that in sample grown without the template. The size of β-FeSi2grains measured by electron back-scatter diffraction was also discussed.