Modeling of amorphous-silicon thin-film transistors for circuit simulations with SPICE
Modeling of amorphous-silicon thin-film transistors for circuit simulations with SPICE
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DOI：
10.1109/16.137323
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发表时间：
1992-06
影响因子：
3.1
通讯作者：
K. Khakzar;E. Lueder
中科院分区：
文献类型：
--
作者：
K. Khakzar;E. Lueder
提出了非晶硅薄膜晶体管的静态和动态模型。该理论基于能隙中深态和尾态的假设指数分布。导出了将局域态密度和温度与漏极电流和晶体管沟道中电荷分布联系起来的表达式。此外，作者还考虑了寄生效应，例如沟道长度调制、截止电阻、漏极和源极电阻、绝缘体中的移动电荷和自由电荷、表面态和重叠电容。该模型被纳入电路仿真程序SPICE中。通过使用面向电荷的动态晶体管模型可以克服电荷守恒问题。模拟和测量的电流-电压特性非常吻合。介绍了一种用于寻址液晶显示器的96位栅极线驱动器，并利用该模型成功设计并优化了该驱动器。 >
A static and dynamic model for amorphous silicon thin-film transistors is presented. The theory is based on an assumed exponential distribution of the deep states and the tail states in the energy gap. Expressions are derived that link the density of the localized states and the temperature to the drain current and the distribution of the charge in the transistor channel. In addition the authors take into account parasitic effects such as channel length modulation, off-resistance, drain and source resistances, mobile and free charges in the insulator, surface states, and overlap capacitances. The model is incorporated into the circuit simulation program SPICE. Charge conservation problems are overcome by using a charge-oriented dynamic transistor model. Simulated and measured current-voltage characteristics agree well. A 96-b gate line driver for addressing liquid-crystal displays, which was successfully designed and optimized with the model, is introduced. >