Tbit/inch2 ferroelectric data storage based on scanning nonlinear dielectric microscopy
Tbit/inch2 ferroelectric data storage based on scanning nonlinear dielectric microscopy
复制标题
DOI：
10.1063/1.1526916
复制
发表时间：
2002-12-02
影响因子：
4
通讯作者：
Kitamura, K
中科院分区：
文献类型：
--
作者：
Cho, YS;Fujimoto, K;Kitamura, K
铁电材料中的纳米级反畴点在超高密度电介质数据存储系统中具有潜在的应用价值。本文介绍了一种基于扫描非线性介电显微镜和铁电单晶钽酸锂薄膜的数据存储系统。通过畴工程，已成功形成纳米级反畴点，数据密度为1.50 Tbit/in。（二）、(C)2002年美国物理学会。
Nanosized inverted domain dots in ferroelectric materials have potential applications in ultrahigh-density rewritable data storage systems. Here, a data storage system based on scanning nonlinear dielectric microscopy and thin films of ferroelectric single-crystal lithium tantalite is presented. Through domain engineering, nanosized inverted domain dots have been successfully formed at a data density of 1.50 Tbit/in.(2). (C) 2002 American Institute of Physics.