Improvement of HfOx-Based RRAM Device Variation by Inserting ALD TiN Buffer Layer
Improvement of HfOx-Based RRAM Device Variation by Inserting ALD TiN Buffer Layer
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通过插入 ALD TiN 缓冲层改善基于 HfOx 的 RRAM 器件变化
DOI：
10.1109/led.2018.2831698
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发表时间：
2018-06-01
影响因子：
4.9
通讯作者：
Huang, Ru
中科院分区：
文献类型：
--
作者：
Fang, Yichen;Yu, Zhizhen;Huang, Ru
在这篇文章中，研究了氧清除金属（Ti）引入的影响，包括形成电压变化和hfox基RRAM器件在高/低状态下的电阻分散。实验表明，在物理气相沉积过程中，Ti原子可以随机渗透到HfOx的主体中，并有意随机产生初始氧空位，从而导致性能下降。此外，提出了一种新的结构，在氧清除Ti和HfOx层之间插入原子层沉积- tin缓冲层，并通过实验证明了这种结构可以减少Ti穿透的影响，从而进一步改进了空位形成方法。实验证明，通过加入TiN缓冲层，有效地改善了形成电压和电阻等开关参数的均匀性。了解和改进氧化基电阻随机存储器（RRAM）中除氧金属引起的器件变化，有助于进一步发展高可靠性的RRAM技术。
In this letter, the impacts introduced by oxygen-scavenging metal (Ti), including forming voltages variation and resistances dispersion in high/low states of HfOx-based RRAM devices, were investigated. Based on experiments, it is concluded that Ti atoms during physical vapor deposition process can randomly penetrate into the bulk of HfOx and are intended to randomly create the initial oxygen vacancies, thus causing the performance degradation. Moreover, a novel structure with an atomic layer deposition-TiN buffer layer inserted between oxygen-scavenging Ti and HfOx layers was proposed and experimentally demonstrated to reduce the impacts of Ti penetration, which further improves vacancy-creating approach. It was experimentally verified that with the help of incorporating a TiN buffer layer, the uniformity of switching parameters, such as forming voltage and resistance, was effectively improved. The understanding and improvement of device variation caused by oxygen-scavenging metal in oxides-based resistive random access memory (RRAM) are useful for further development of highly reliable RRAM technology.