Gate-field-induced phase transitions in VO2: Monoclinic metal phase separation and switchable infrared reflections
Gate-field-induced phase transitions in VO2: Monoclinic metal phase separation and switchable infrared reflections
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DOI：
10.1063/1.3009569
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发表时间：
2008-10-27
影响因子：
4
通讯作者：
Guo, Chongfeng
中科院分区：
文献类型：
--
作者：
Chen, Changhong;Wang, Renfan;Guo, Chongfeng
在金属-氧化物-半导体VO2有源层中，通过强依赖于场的拉曼散射和红外反射揭示了单轴应力下栅场诱导的相变。金属-绝缘体转变(MIT)是通过渗流的强关联单斜金属相分离来实现的，从而使反射可切换。此外，MIT的栅极电压约为3.36V，远低于结构相变(SPT)的阈值。因此，MIT很容易被栅场控制，从而避免了SPT在高速运行时引起的疲劳和击穿。(C)2008年美国物理研究所。[DOI：10.1063/1.3009569]
In a metal-oxide-semiconductor VO2 active layer under uniaxial stress, gate- field- induced phase transitions are revealed by strongly field- dependent Raman scattering and infrared reflections. A metal- insulator transition (MIT) is demonstrated by a strongly correlated monoclinic metal phase separation that percolates, thereby making the reflections switchable. In addition, the MIT occurs at a gate voltage around 3.36 V, much lower than the threshold of a structural phase transition (SPT). Hence, the MIT is easily controlled by the gate field to avoid the SPT-caused fatigue and breakdown in high-speed operation. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3009569]