Nonmagnetic Quantum Emitters in Boron Nitride with Ultranarrow and Sideband-Free Emission Spectra
Nonmagnetic Quantum Emitters in Boron Nitride with Ultranarrow and Sideband-Free Emission Spectra
复制标题
DOI：
10.1021/acsnano.7b00638
复制
发表时间：
2017-07-01
期刊：
影响因子：
17.1
通讯作者：
Strauf, Stefan
中科院分区：
文献类型：
--
作者：
Li, Xiangzhi;Shepard, Gabriella D.;Strauf, Stefan
六方氮化硼（hBN）是纳米光子学中的一种新兴材料，也是量子光子器件色心的理想基质。在这里，我们表明，从单个量子发射器在hBN的光发射是空间相关的结构缺陷，可以显示ultransarrow零声子线宽下降到45 μ eV，如果光谱扩散有效地消除了适当的表面钝化。我们表明，不希望的发射到声子边带在很大程度上是不存在的这种类型的发射器。此外，磁光表征揭示了循环光学跃迁，g因子的上限为0.2 +/-0.2。自旋极化的密度泛函理论计算预测可能的相称之间的过渡，类似的自旋电子状态，这是在很好的协议与实验的电子缺陷中心发射。我们的研究结果是实现窄带量子光源和发展未来芯片级量子网络的二维材料内的自旋光子接口的一步。
Hexagonal boron nitride (hBN) is an emerging material in nanophotonics and an attractive host for color centers for quantum photonic devices. Here, we show that optical emission from individual quantum emitters in hBN is spatially correlated with structural defects and can display ultranarrow zero-phonon line width down to 45 mu eV if spectral diffusion is effectively eliminated by proper surface passivation. We demonstrate that undesired emission into phonon sidebands is largely absent for this type of emitter. In addition, magneto-optical characterization reveals cycling optical transitions with an upper bound for the g-factor of 0.2 +/- 0.2. Spin-polarized density functional theory calculations predict possible commensurate transitions between like-spin electron states, which are in excellent agreement with the experimental nonmagnetic defect center emission. Our results constitute a step toward the realization of narrowband quantum light sources and the development of spin-photon interfaces within 2D materials for future chip-scale quantum networks.