Improved reverse blocking characteristics in AlGaN=GaN Schottky barrier diodes based on AlN template
Improved reverse blocking characteristics in AlGaN=GaN Schottky barrier diodes based on AlN template
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DOI：
10.1049/el:20071141
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发表时间：
2007-08
影响因子：
1.1
通讯作者：
M. Miyoshi;Y. Kuraoka;K. Asai;T. Shibata;M. Tanaka;T. Egawa
中科院分区：
文献类型：
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作者：
M. Miyoshi;Y. Kuraoka;K. Asai;T. Shibata;M. Tanaka;T. Egawa
在AlN模板和蓝宝石衬底上分别制作了圆形阳极结构的AlGaN/GaN基平面肖特基势垒二极管（SBD）。与蓝宝石上形成的SBD相比，AlN模板上形成的SBD表现出明显改善的反向阻挡特性。这似乎是由于使用AlN模板实现了高晶体质量。这些SBD的击穿电压随着阳极到阴极的间距而增加，并且对于在AlN模板上形成的SBD，在50 μm的间隙间距处达到约3 kV的高值。
AlGaN/GaN-based planer Schottky barrier diodes (SBDs) with circular anode configuration were formed on AlN template and on sapphire. SBDs formed on AlN template exhibited clearly improved reverse-blocking characteristics compared with SBDs formed on sapphire. This appears to be due to their high crystal quality realised as a result of using AlN template. Breakdown voltages in those SBDs increased with the anode-to-cathode spacing and reached a high value of approximately 3 kV at a gap-spacing of 50 µm for SBDs formed on AlN template.