Manganese diffusion in monocrystalline germanium
Manganese diffusion in monocrystalline germanium
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DOI：
10.1016/j.scriptamat.2012.04.038
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发表时间：
2012-08-01
影响因子：
6
通讯作者：
Girardeaux, C.
中科院分区：
文献类型：
--
作者：
Portavoce, A.;Abbes, O.;Girardeaux, C.
通过二次离子质谱研究了通过分子束外延在Ge(0 0 1)衬底上沉积的半单层Mn的扩散。 Mn在外在条件下扩散到Ge中，溶解度为0.7-0.9%。所有 Mn 原子都被激活，占据 Ge 取代位点并表现出负电荷，这与半导体掺杂理论一致。扩散机制是空位 (V) 介导的，建议形成 Mn-V 对。 Mn 表面解吸发生在温度 >600 摄氏度的情况下。(C) 2012 Acta Materialia Inc. 由 Elsevier Ltd 出版。保留所有权利。
The diffusion of a half monolayer of Mn deposited by molecular beam epitaxy on a Ge(0 0 1) substrate was studied via secondary ion mass spectrometry. Mn diffused in Ge under extrinsic conditions, exhibiting a solubility of 0.7-0.9%. All the Mn atoms were activated, occupying Ge substitutional sites and exhibiting a negative charge, in agreement with semiconductor doping theory. The diffusion mechanism being vacancy (V)-mediated, the formation of Mn-V pairs is suggested. Mn surface desorption occurred for temperatures >600 degrees C. (C) 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.