Narrow photoluminescence linewidths from ensembles of self-assembled InGaAs quantum dots
Narrow photoluminescence linewidths from ensembles of self-assembled InGaAs quantum dots
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自组装 InGaAs 量子点集合的窄光致发光线宽
DOI：
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发表时间：
2000
期刊：
影响因子：
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通讯作者：
A. Roshko
中科院分区：
文献类型：
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作者：
R. Mirin;K. Silverman;D. H. Christensen;A. Roshko
使用 In、Ga 和 As2 交替分子束生长自组装 InGaAs 量子点。随着量子点变大，尺寸分布从双峰变为单分散。对这些量子点集合进行的室温光致发光实验表明，当中心波长从约 1130 nm 变化到 1345 nm 时，发射强度仍然很高。所有研究样品的线宽均小于 30 meV，在峰值发射能量 930.1 meV（1333 nm）时测得的最窄线宽为 18 meV。
Self-assembled InGaAs quantum dots have been grown using alternating molecular beams of In, Ga, and As2. The size distribution changes from bimodal to monodisperse as the quantum dots grow larger. Room-temperature photoluminescence experiments on ensembles of these quantum dots show that the emitted intensity remains high as the center wavelength changes from about 1130 to 1345 nm. The linewidths are less than 30 meV for all samples studied, with the narrowest measured linewidth being 18 meV at a peak emission energy of 930.1 meV (1333 nm).