Structure and optoelectronic properties of spray deposited Mg doped p-CuCrO2 semiconductor oxide thin films
Structure and optoelectronic properties of spray deposited Mg doped p-CuCrO2 semiconductor oxide thin films
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DOI：
10.1063/1.2957056
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发表时间：
2008-07
影响因子：
3.2
通讯作者：
A. Rastogi;S. H. Lim;S. Desu
中科院分区：
文献类型：
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作者：
A. Rastogi;S. H. Lim;S. Desu
采用金属有机物前驱体化学喷涂技术在石英衬底上制备了透明p型Mg掺杂CuCrO 2宽带隙氧化物半导体薄膜。在≥700 °C的氩气环境中退火的薄膜主要为结晶的单相CuCrO 2铜铁矿结构，但沉积态薄膜含有尖晶石CuCr 2 O 4混合相。X射线光电子能谱表明，Cr 2 p的自旋轨道分裂能约为9.8eV，与Cr 3+的价态一致，Cr 2 p3/2分辨峰显示了Cr 4 +/Cr 6+的混合价态，证实了喷射沉积膜中存在CuCr 0.93Mg 0.07O2化合物相。研究了基片温度和薄膜厚度对薄膜光学、电导率和热电系数的影响。制备了高透明的≥80% CuCr 0.93Mg 0.07O2薄膜，其直接和间接光学带隙分别为3.08和2.58 eV（155 nm）和3.14和2.79 eV（305 nm）。在532和484 nm处的光致发光发射带被解释为来自3d 94 s1和3d...
Transparent p-type Mg doped CuCrO2 wide-band-gap oxide semiconductor thin films were deposited over quartz substrates by chemical spray technique using metallo-organic precursors. Crystalline single phase CuCrO2 delafossite structure was dominant in ≥700 °C argon ambient annealed films but the as-deposited films contained spinel CuCr2O4 mixed phases. X-ray photoelectron Cr 2p spectra show spin-orbit splitting energy ∼9.8 eV consistent with Cr3+ valance state and Cr 2p3/2 resolved peaks show mixed valence state on Cr4+/Cr6+ confirming CuCr0.93Mg0.07O2 compound phase in spray deposited films. The effect of substrate temperature and film thickness on optical, electrical conductivity, and thermoelectric coefficient was investigated. Highly transparent ≥80% CuCr0.93Mg0.07O2 films with direct and indirect optical band gaps of 3.08 and 2.58 eV for 155 nm and 3.14 and 2.79 for 305 nm thin films, respectively, were obtained. Photoluminescence emission bands at 532 and 484 nm interpreted to arise from 3d94s1 and 3d...