Surface orientation dependence of SiC oxidation process studied by in-situ spectroscopic ellipsometry
Surface orientation dependence of SiC oxidation process studied by in-situ spectroscopic ellipsometry
复制标题
原位光谱椭圆光度法研究 SiC 氧化过程的表面取向依赖性
DOI:
--
复制
发表时间:
2014
期刊:
影响因子:
--
通讯作者:
H. Yaguchi
中科院分区:
文献类型:
--
作者:
D. Goto;S. Yagi;Y. Hijikata;H. Yaguchi