Impact of incomplete ionization of dopants on the electrical properties of compensated p-type silicon
Impact of incomplete ionization of dopants on the electrical properties of compensated p-type silicon
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DOI：
10.1063/1.3686151
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发表时间：
2012-02
影响因子：
3.2
通讯作者：
M. Forster;A. Cuevas;E. Fourmond;F. Rougieux;M. Lemiti
中科院分区：
文献类型：
--
作者：
M. Forster;A. Cuevas;E. Fourmond;F. Rougieux;M. Lemiti
本文研究了补偿 p 型硅中掺杂剂不完全电离的重要性及其对多数载流子密度和迁移率以及电阻率的影响。理论计算和与温度相关的霍尔效应测量都表明，与具有相同净掺杂的未补偿硅相比，补偿硅中的不完全电离对载流子密度的影响更大。先前提出的用于解释补偿硅中迁移率降低的补偿特定散射机制的存在与所测量的载流子迁移率的 T 依赖性不一致。实验还表明，在300 K附近，补偿硅的电阻率对温度的依赖性比未补偿硅弱得多。
This paper investigates the importance of incomplete ionization of dopants in compensated p-type Si and its impact on the majority-carrier density and mobility and thus on the resistivity. Both theoretical calculations and temperature-dependent Hall-effect measurements demonstrate that the carrier density is more strongly affected by incomplete ionization in compensated Si than in uncompensated Si with the same net doping. The previously suggested existence of a compensation-specific scattering mechanism to explain the reduction of mobility in compensated Si is shown not to be consistent with the T-dependence of the measured carrier mobility. The experiment also shows that, in the vicinity of 300 K, the resistivity of compensated Si has a much weaker dependence on temperature than that of uncompensated silicon.