Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth
Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth
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DOI：
10.1063/1.2820381
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发表时间：
2007-12-03
影响因子：
4
通讯作者：
Mishra, Umesh K.
中科院分区：
文献类型：
--
作者：
Wong, Man Hoi;Pei, Yi;Mishra, Umesh K.
由于AlGaN势垒，Ga面n（+）-GaN/AlGaN/GaN高电子迁移率晶体管（HEMT）结构上的非合金欧姆接触通常对二维电子气（2DEG）具有显著的接触电阻。通过在N面上反转生长HEMT结构，来自触点的电子能够在不穿过AlGaN层的情况下进入2DEG。在没有对倒置HEMT结构进行接触退火的情况下，实现了0.16 Ω mm的低接触电阻和5.5 × 10（-7）Ω cm（2）的比接触电阻率。(c)2007年，美国物理学会。
Nonalloyed Ohmic contacts on Ga-face n(+)-GaN/AlGaN/GaN high electron mobility transistor (HEMT) structures typically have significant contact resistance to the two-dimensional electron gas (2DEG) due to the AlGaN barrier. By growing the HEMT structure inverted on the N-face, electrons from the contacts were able to access the 2DEG without going through an AlGaN layer. A low contact resistance of 0.16 Omega mm and specific contact resistivity of 5.5x10(-7) Omega cm(2) were achieved without contact annealing on the inverted HEMT structure. (c) 2007 American Institute of Physics.