Structural evaluation of ions-implanted GaN films by photothermal deflection spectroscopy
Structural evaluation of ions-implanted GaN films by photothermal deflection spectroscopy
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DOI：
10.1063/1.5052493
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发表时间：
2018-11
期刊：
影响因子：
1.6
通讯作者：
M. Sumiya;K. Fukuda;H. Iwai;T. Yamaguchi;T. Onuma;T. Honda
中科院分区：
文献类型：
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作者：
M. Sumiya;K. Fukuda;H. Iwai;T. Yamaguchi;T. Onuma;T. Honda
我们利用光热偏转光谱（PDS）表征了在GaN薄膜中注入C、O、Si和Mg离子的热退火行为，以及与黄色发光相关的结构紊乱和缺陷水平。虽然被离子轰击破坏的注入区可以通过退火恢复，但x射线衍射评估的FWHM值ω(0002)几乎与温度无关。然而，作为结构无序度指标的Urbach能量在PDS评价中得到了改进。结构紊乱的恢复可能取决于剂量而不是加速度电压。带隙中的缺陷态也减少了，但除了碳离子外，几乎检测不到与注入离子类型相关的特征PDS信号。由于乌尔巴赫能的提高和带隙中缺陷态的减少，室温下的黄色发光强度得到了增强。PDS可用于分析III-V型氮化半导体的缺陷，如离子注入样品，特别是mg注入GaN，以实现可靠的p型导电。我们利用光热偏转光谱（PDS）表征了在GaN薄膜中注入C、O、Si和Mg离子的热退火行为，以及与黄色发光相关的结构紊乱和缺陷水平。虽然被离子轰击破坏的注入区可以通过退火恢复，但x射线衍射评估的FWHM值ω(0002)几乎与温度无关。然而，作为结构无序度指标的Urbach能量在PDS评价中得到了改进。结构紊乱的恢复可能取决于剂量而不是加速度电压。带隙中的缺陷态也减少了，但除了碳离子外，几乎检测不到与注入离子类型相关的特征PDS信号。由于乌尔巴赫能的提高和带隙中缺陷态的减少，室温下的黄色发光强度得到了增强。PDS可用于III-V型氮化物半合金的缺陷分析。
We characterize the behavior caused by thermal annealing for C, O, Si and Mg ions implanted in GaN films by photothermal deflection spectroscopy (PDS) with respect to structural disorder and defect levels related to yellow luminescence. Although the implanted region damaged by ion bombardment is recovered by annealing, the FWHM values of ω(0002) evaluated by x-ray diffraction are almost independent of the temperature. However, the Urbach energy, as an index of structural disorder, evaluated by PDS is improved. Recovery of the structural disorder is likely to depend on the dose quantity rather than the acceleration voltage. Defect states in the band gap are reduced as well, though featured PDS signals related to the kind of implanted ion are hardly detected except for the carbon ion. The intensity of yellow luminescence at room temperature is enhanced according to the improvement of the Urbach energy and reduction of defect states in the band gap. PDS is useful for defect analysis of III-V nitride semiconductors that are electrically and optically inactive, such as ion-implantation samples, especially Mg-implanted GaN for achieving reliable p-type conduction.We characterize the behavior caused by thermal annealing for C, O, Si and Mg ions implanted in GaN films by photothermal deflection spectroscopy (PDS) with respect to structural disorder and defect levels related to yellow luminescence. Although the implanted region damaged by ion bombardment is recovered by annealing, the FWHM values of ω(0002) evaluated by x-ray diffraction are almost independent of the temperature. However, the Urbach energy, as an index of structural disorder, evaluated by PDS is improved. Recovery of the structural disorder is likely to depend on the dose quantity rather than the acceleration voltage. Defect states in the band gap are reduced as well, though featured PDS signals related to the kind of implanted ion are hardly detected except for the carbon ion. The intensity of yellow luminescence at room temperature is enhanced according to the improvement of the Urbach energy and reduction of defect states in the band gap. PDS is useful for defect analysis of III-V nitride semicond...