Bias Effect on the Microstructure and Diffusion Barrier Capability of Sputtered TiN and TiO x N y Films
Bias Effect on the Microstructure and Diffusion Barrier Capability of Sputtered TiN and TiO x N y Films
复制标题
偏置对溅射 TiN 和 TiO x N y 薄膜微观结构和扩散势垒能力的影响
DOI：
10.1143/jjap.31.1446
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发表时间：
1992
期刊：
影响因子：
--
通讯作者：
S. Maruno
中科院分区：
文献类型：
--
作者：
P. Jin;S. Maruno
利用高分辨场发射扫描电子显微镜（FE-SEM）研究了在Ar-N2或Ar-N2-O2混合气体中沉积在Si（100）衬底上的TiN和TiOxNy薄膜的微观结构。在负偏压下沉积的TiN薄膜具有非常致密的微观结构，薄膜表面存在由高压应力引起的小丘。氧的加入改变了TiN薄膜的微观结构，由于应力松弛效应，TiOxNy表面的小丘消失。通过真空退火Al/TiN（或TiOxNy）/Si的内热扩散实验发现，薄膜的扩散阻挡性能除与氧含量本身有关外，还与薄膜的微观结构和内应力有关。
The microstructure of TiN and TiOxNy films deposited on Si(100) substrates in an Ar-N2 or an Ar-N2-O2 gas mixture was evaluated with a high-resolution field emission scanning electron microscope (FE-SEM). The TiN films deposited under an applied negative substrate bias have an extremely dense microstructure with hillocks on the film surface caused by the high compressive stress. The addition of oxygen modifies the microstructure of TiN film, i.e., the hillocks disappeared on the surface of TiOxNy by virtue of the stress relaxation effect. It has been found through the experiment of internal thermal diffusion by annealing Al/TiN (or TiOxNy)/Si in a vacuum that the diffusion barrier performance of the films is associated with the microstructure and internal stress in addition to the oxygen content itself.