Selective Mechanical Transfer of Graphene from Seed Copper Foil Using Rate Effects
Selective Mechanical Transfer of Graphene from Seed Copper Foil Using Rate Effects
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DOI：
10.1021/nn505178g
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发表时间：
2015-02-01
期刊：
影响因子：
17.1
通讯作者：
Liechti, Kenneth M.
中科院分区：
文献类型：
--
作者：
Na, Seung Ryul;Suk, Ji Won;Liechti, Kenneth M.
基于机械分层的非常快速的干法转移工艺成功地实现了铜箔上大面积（VD）生长的石墨烯到硅的转移。这已经通过用环氧树脂将硅背衬层结合到石墨烯涂覆的铜箔的两侧并向背衬层施加适当高的分离速率来实现。在所考虑的最高分离速率（254.0 μ m/s）下，单层石墨烯完全从铜箔转移到目标硅衬底。另一方面，最低速率（25.4 μ m/s）导致环氧树脂与石墨烯完全分离。断裂力学分析用于确定在相应的加载速率下石墨烯与其种子铜箔之间的粘附能（6.0J/m2）以及石墨烯与环氧树脂之间的粘附能（3.4J/m2）。环氧树脂/硅界面的对照实验建立了速率依赖性粘附，这支持了石墨烯/环氧树脂界面的粘附在较高分离速率下高于石墨烯/铜界面的粘附的假设，从而提供了用于在未来纳米纤维系统中选择性转移石墨烯的可控机制，例如卷对卷转移。
A very fast, dry transfer process based on Mechanical delamination successfully effected the transfer of large-area, (VD grown graphene on copper foil to silicon. This has been achieved by bonding silicon backing layers to both sides of the graphene-coated copper foil with epoxy and applying a suitably high separation rate to the backing layers. At the highest separation rate considered (254.0 mu m/s), monolayer graphene was completely transferred from the copper foil to the target silicon substrate. On the other hand, the lowest rate (25.4 mu m/s) caused the epoxy to be completely separated from the graphene. Fracture mechanics analyses were used to determine the adhesion energy between grapheiie and its seed copper foil (6.0 J/m(2)) and between graphene and the epoxy (3.4 J/m(2)) at the respective loading rates. Control experiments for the epoxy/silicon interface established a rate dependent adhesion, which supports the hypothesis that the adhesion of the graphene/epoxy interface was higher than that of the graphene/copper interface at the higher separation rate, thereby providing a controllable mechanism for selective transfer of graphene in future nanofabrication systems such as roll-to-roll transfer.