LOW-TEMPERATURE ETCHING OF SI IN HIGH-DENSITY PLASMA USING SF6/O-2
LOW-TEMPERATURE ETCHING OF SI IN HIGH-DENSITY PLASMA USING SF6/O-2
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DOI：
10.1016/0167-9317(94)00144-j
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发表时间：
1995-02-01
影响因子：
2.3
通讯作者：
MAQUIN, P
中科院分区：
文献类型：
--
作者：
BARTHA, JW;GRESCHNER, J;MAQUIN, P
本文用DECR系统和一种特殊的螺旋型等离子体源，研究了SF_6对Si的低温腐蚀。 与目前对低温蚀刻的理解相反，我们没有观察到横向蚀刻反应的“冻结”，而是获得了各向同性的蚀刻轮廓，即使在低于-120摄氏度的温度下。 通过添加O2获得各向异性蚀刻轮廓。 因此，我们提出了一个侧壁钝化机制来解释横向蚀刻的减少。 在选择性Si/SiO2远高于100/1时，Si蚀刻速率为5 μ m/min，具有各向异性轮廓。
Low temperature etching of Si with SF6 has been studied, using a DECR system and a special Helicon type plasma source. In contrast to the current understanding of low temperature etching, we did not observe a ''freezing'' of the lateral etching reaction, but obtained isotropic etch profiles, even at temperatures below -120-degrees-C. Anisotropic etch profiles are obtained by an addition of O2. We therefore propose a sidewall passivation mechanism to explain the reduction of the lateral etching. Si etch rates of 5 mum/min at selectivities Si/SiO2 well above 100/1, with anisotropic profile have been obtained.