In-situ analysis of microwave conductivity and impedance spectroscopy for evaluation of charge carrier dynamics at interfaces
In-situ analysis of microwave conductivity and impedance spectroscopy for evaluation of charge carrier dynamics at interfaces
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DOI：
10.1063/1.5003207
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发表时间：
2017-11-13
影响因子：
4
通讯作者：
Seki, Shu
中科院分区：
文献类型：
--
作者：
Choi, Wookjin;Inoue, Junichi;Seki, Shu
开发了一种独特的协调分析方法，包括非接触式微波电导率测量和阻抗谱，以同时评估载流子迁移率和注入势垒。通过施加正弦电压确定等效电路参数，分析了微波电导率与电流的频率依赖性。基于电路参数的温度依赖性，Richardson-Schottky模型估计注入势场能量为0.4 eV， C8-BTBT层内导电存在带状输运，温度系数为负，β值为1.4。相反，C8-BTBT层电阻随温度降低而增加，说明C8-BTBT层间传导发生了跳状输运。AIP出版社出版。
A unique concerted analysis comprising non-contact microwave conductivity measurements and impedance spectroscopy was developed to simultaneously assess the charge carrier mobility and injection barriers. The frequency dependence of the microwave conductivity as well as the electrical current was analyzed by applying sinusoidal voltage to determine the equivalent circuit parameters. Based on the temperature dependence of the circuit parameters, the energy of the injection barrier was estimated to be 0.4 eV with the Richardson-Schottky model, and the band-like transport was confirmed with the negative temperature coefficient with the beta value of 1.4 in the intra-layer conduction of C8-BTBT. In contrast, the increase in the resistance of the C8-BTBT layer with decreasing temperature implied the occurrence of hopping-like transport in the inter-layer conduction of C8-BTBT. Published by AIP Publishing.