High-order Runge-Kutta discontinuous Galerkin methods with multi-resolution WENO limiters for solving steady-state problems
High-order Runge-Kutta discontinuous Galerkin methods with multi-resolution WENO limiters for solving steady-state problems
复制标题
具有多分辨率 WENO 限制器的高阶 Runge-Kutta 不连续 Galerkin 方法用于解决稳态问题
DOI:
10.1016/j.apnum.2021.03.011
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发表时间:
2021-07
影响因子:
2.8
通讯作者:
Qiu Jianxian
中科院分区:
文献类型:
--
作者:
Zhu Jun;Shu Chi-Wang;Qiu Jianxian
Since the classical WENO schemes [27] might suffer from slight post-shock oscillations (which are responsible for the numerical residual to hang at a truncation error level) and the new high-order multi-resolution WENO schemes [59] are successful to solve for steady-state problems, we apply these high-order finite volume multi-resolution WENO techniques to serve as limiters for high-order Runge-Kutta discontinuous Galerkin (RKDG) methods in simulating steady-state problems. Firstly, a new troubled cell indicator is designed to precisely detect the cells which would need further limiting procedures. Then the high-order multi-resolution WENO limiting procedures are adopted on a sequence of hierarchical L 2 projection polynomials of the DG solution within the troubled cell itself. By doing so, these RKDG methods with multi-resolution WENO limiters could gradually degrade from the optimal high-order accuracy to the first-order accuracy near strong discontinuities, suppress the slight post-shock oscillations, and push the numerical residual to settle down to machine zero in steady-state simulations. These new multi-resolution WENO limiters are very simple to construct and can be easily implemented to arbitrary high-order accuracy for solving steady-state problems in multi-dimensions.
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影响因子:
2.9
作者:
S. Osher;S. Chakravarthy
通讯作者:
S. Osher;S. Chakravarthy
DOI:
10.1016/j.jcp.2017.06.046
发表时间:
2017-10
期刊:
J. Comput. Phys.
影响因子:
--
作者:
G. Fu;Chi-Wang Shu
通讯作者:
G. Fu;Chi-Wang Shu
DOI:
--
发表时间:
--
期刊:
--
影响因子:
--
作者:
A. Tesdall;R. Sanders;B. Keyfitz
通讯作者:
A. Tesdall;R. Sanders;B. Keyfitz
影响因子:
3.7
作者:
global sci
通讯作者:
global sci
影响因子:
2
作者:
Bernardo Cockburn;S. Hou;Chi-Wang Shu
通讯作者:
Bernardo Cockburn;S. Hou;Chi-Wang Shu