Sequenced Successive Ionic Layer Adsorption and Reaction for Rational Design of Ni(OH)2/FeOOH Heterostructures with Tailored Catalytic Properties
Sequenced Successive Ionic Layer Adsorption and Reaction for Rational Design of Ni(OH)2/FeOOH Heterostructures with Tailored Catalytic Properties
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DOI：
10.1021/acsaem.1c01505
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发表时间：
2021-08-09
影响因子：
6.4
通讯作者：
Suzuki，Yoshikazu
中科院分区：
文献类型：
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作者：
Taniguchi，Asako;Kubota，Yuta;Suzuki，Yoshikazu
使用纳米级异质结构是开发不含贵金属的催化剂以实现可持续能源转换的有效方法。在这项研究中，开发了一种顺序连续离子层吸附和反应（sequenced-SILAR）方法来制造 Ni(OH)2/FeOOH 异质结构。在此方法中，对各个 Ni(OH)2 和 FeOOH 层的沉积循环顺序进行编程，以控制异质结构中这些层的厚度和堆叠顺序。使用 Fe2+ 溶液作为铁源的测序 SILAR 工艺产生了致密异质结，在 10 mA cm-2 电流下，在平坦导电氧化物基底和多孔镍泡沫上进行析氧反应 (OER) 时，过电势分别为 330 和 234 mV。对沉积顺序依赖性 OER 活性的研究表明，Ni(OH)2/FeOOH 耦合效应可能延伸到距离异质界面约 10 nm 的 Ni2+ 活性位点。当在测序-SILAR 过程中使用 Fe3+ 前驱体时，由于形成了孤立的 FeOOH 颗粒，因此不会产生致密异质结。结果，没有获得优异的过电位。原则上，sequence-SILAR方法可以扩展到各种类型异质结构的制造。然而，必须仔细设计沉积条件以提供强的界面耦合效应。
The use of nanoscale heterostructures is an effective approach for developing catalysts that are free of precious metals for sustainable energy conversion. In this study, a sequenced successive ionic layer adsorption and reaction (sequenced-SILAR) method was developed for the fabrication of Ni(OH)2/FeOOH heterostructures. In this method, the order of the deposition cycles of individual Ni(OH)2and FeOOH layers was programmed to control the thickness and stacking order of these layers in the heterostructure. The sequenced-SILAR process using an Fe2+solution as the iron source produced dense heterojunctions offering overpotentials of 330 and 234 mV at 10 mA cm–2for an oxygen evolution reaction (OER) on a flat, conducting oxide substrate and porous Ni foam, respectively. Investigation of the deposition-sequence-dependent OER activity indicated that the Ni(OH)2/FeOOH coupling effects may extend to the Ni2+active sites located about 10 nm from the heterointerface. When an Fe3+precursor was employed in the sequenced-SILAR process, dense heterojunctions were not produced because of the formation of isolated FeOOH particles. As a result, an excellent overpotential was not obtained. In principle, the sequenced-SILAR method can be extended to the fabrication of various types of heterostructures. However, the deposition conditions must be carefully designed to offer strong interfacial coupling effects.