Vertically aligned ZnO/amorphous-Si core–shell heterostructured nanowire arrays
Vertically aligned ZnO/amorphous-Si core–shell heterostructured nanowire arrays
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DOI：
10.1088/0957-4484/21/47/475703
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发表时间：
2010-11
期刊：
影响因子：
3.5
通讯作者：
Chun Cheng;Tai-Lun Wang;Lin Feng;Wei Li;K. M. Ho;M. Loy;K. Fung;Ning Wang
中科院分区：
文献类型：
--
作者：
Chun Cheng;Tai-Lun Wang;Lin Feng;Wei Li;K. M. Ho;M. Loy;K. Fung;Ning Wang
We report the synthesis of vertically aligned ZnO/a-Si core–shell nanowire arrays (ZnO nanowires coated with amorphous silicon) through chemical vapor deposition. The core–shell heterostructured nanowires possessed uniform morphology and the thickness of the amorphous silicon shells could be controlled easily by tuning the deposition duration and temperature. The core–shell heterostructured nanowires exhibited enhanced antireflection and absorption performance as well as tunable PL properties. Because the individual ZnO/a-Si nanowires showed p-type characteristics and the ZnO cores were n-type semiconductors, the core–shell nanowires formed p–n junctions naturally.
