Progress report on EBIS devices in Frankfurt
Progress report on EBIS devices in Frankfurt
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法兰克福 EBIS 设备进展报告
DOI：
10.1063/1.1427034
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发表时间：
2002
影响因子：
1.6
通讯作者：
B. Zipfel
中科院分区：
文献类型：
--
作者：
M. Kleinod;R. Becker;M. Mücke;B. Zipfel
无约束磁场交叉电子束离子源（XEBIST）向高束流能量方向迈出了重要的一步。通过使用磁透镜系统进行适当匹配，实现了电子束的高度压缩。证明了通过部分中和透镜部分中的束空间电荷来减小透镜像差的重要性。在陷阱区的有效电流密度已被进一步增加的自箍缩与空间电荷中和。在我们的第一个实验中，在22 keV的电子能量，在40 ms的中和时间，在陷阱中的平均电流密度从10增加到150 A/cm 2。像Ar 17+这样的高电荷离子就是这样产生的。采用射频调制电子束流的方法成功地实现了Penning离子阱-电子束源组合装置（PITEBIS）。这种新的调制方式不仅可用于清除EBIS源中不需要的离子种类，而且还可用于增强EBIS源的性能。
The crossover electron beam ion source (XEBIST) without confining magnetic field has made an important step towards higher electron beam energies. By proper matching using a magnetic lens system, a high compression of the electron beam has been achieved. The importance of reducing the lens aberrations by partial neutralization of the beam space charge in the lens section has been demonstrated. The effective current density in the trap region has been further increased by self-pinching in connection with space-charge neutralization. In our first experiments at an electron energy of 22 keV, the average current density in the trap increased from 10 to 150 A/cm2 at 40 ms neutralization time. Highly charged ions like Ar17+ were produced in this way. The combined Penning ion trap and electron beam source (PITEBIS) was operated successfully by radio-frequency modulating the current of the electron beam. This new kind of modulation could be used not only for cleaning EBIS sources from unwanted ion species but als...